Titre : | Semiconductor Fundamentals (Part 3) : transistor topologies (2019) |
Auteurs : | George Novacek, Auteur |
Type de document : | Article : texte imprimé |
Dans : | Circuit cellar (352, November 2019) |
Article en page(s) : | P. 70-73 |
Langues: | Américain |
Sujets : |
IESN Circuit électronique ; Diode ; Electronique ; Transistor bipolaire à jonction |
Résumé : |
"In Part 2, George discussed devices built with one P-N junction, appropriately named diodes. In this article, he considers devices with more junctions. He starts with two and looks at the ubiquitous, threeterminal bipolar junction transistor (BJT). George looks at the math, science and circuitry of these devices." (Extrait de Circuit Cellar n°352)
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